专利类型:  发明专利
申请号:  EP12825485
申请日期:  2012-02-03
公开号:  EP2674511B1
公开日期:  2016-09-14
申请人:  JX NIPPON MINING & METALS CORP
发明人:  MAKINO NOBUHITO;OKABE TAKEO;TSUKAMOTO SHIRO
地址:  
摘要:  A high-purity titanium target for sputtering, which contains, as additive components, one or more elements selected from Al, Si, S, Cl, Cr, Fe, Ni, As, Zr, Sn, Sb, B, and La in a total amount of 3 to 100 mass ppm, and of which the purity excluding additive components and gas components is 99.99 mass% or higher. An object of this invention is to provide a high-quality titanium target for sputtering, which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and capable of stabilizing the sputtering characteristics.
主权项:  A high-purity titanium target for sputtering, consisting of: the following additive components: 1ppm ≤ Al < 100ppm, 0.2ppm ≤ Si < 100ppm, 1 ppm ≤ S < 100ppm, 0.3ppm ≤ Cr < 100ppm, 10ppm < Fe < 100ppm, 0.2ppm ≤ Zr < 100ppm, 0.1ppm ≤ Sn < 100ppm, and optionally one or more of: Cl, Ni, As, Sb and La, wherein the total amount of all additive components is from 3 to 100ppm, and the balance titanium, wherein the purity of the target excluding unavoidable impurities and gas components is 99.99 mass% or higher.
专利分类号:  C22C14/00;C23C14/34;C22F1/18;C23C14/14
专利状态:  有效专利
代理人:  
代理机构:  Hoarton, Lloyd Douglas Charles
国家及地区:  
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